STGW38IH130D

-Manufacturer:STMicroelectronics
-Product Category:IGBT Transistors
-RoHS:Details
-Technology:Si
-Package / Case:TO-247
-Mounting Style:Through Hole
-Configuration:Single
-Collector- Emitter Voltage VCEO Max:1300 V
-Collector-Emitter Saturation Voltage:2.1 v
-Maximum Gate Emitter Voltage:25 V
-Continuous Collector Current at 25 C:55 A
-Pd – Power Dissipation:180 W
-Minimum Operating Temperature:- 55 C
-Maximum Operating Temperature:+ 150 C
-Series:STGW38IH130D
-Packaging:Tube
-Height:20.15 mm
-Length:15.75 mm
-Width:5.15 mm
-Brand:STMicroelectronics
-Continuous Collector Current:55 A
-Gate-Emitter Leakage Current:+/- 100 nA
-Product Type:IGBT Transistors
-Factory Pack Quantity:30
-Subcategory:IGBTs
-Unit Weight:6g